v rrm = 45 v - 100 v i f(av) = 200 a features ? high surge capability three tower package ? isolation type package ? electrically isolated base plate ? not esd sensitive parameter symbol mbrt20045(r) mbrt20060(r) unit repetitive peak reverse voltage v rrm 45 60 v rms reverse voltage v rms 32 42 v dc blocking voltage v dc 45 60 v conditions 100 silicon power schottk y diode mbrt200100(r) 80 56 mbrt20080(r) 70 100 80 mbrt20045 thru mbrt200100r maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) ? types from 45 v to 100 v v rrm dc blocking voltage v dc 45 60 v operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol mbrt20045(r) mbrt20060(r) unit average forward current (per pkg) i f(av) 200 200 a maximum instantaneous forward voltage (per leg) 0.70 0.75 11 10 10 30 30 thermal characteristics thermal resistance, junction- case (per leg) r jc 0.45 0.45 c/w -55 to 150 200 200 peak forward surge current (per leg) i fsm t p = 8.3 ms, half sine 1500 1500 1500 1500 a t j = 100 c 10 10 0.45 0.45 ma v -55 to 150 electrical characteristics, at tj = 25 c, unless otherwise specified maximum instantaneous reverse current at rated dc blocking voltage (per leg) i r v f 30 -55 to 150 t j = 150 c 30 t j = 25 c i fm = 100 a, t j = 25 c conditions -55 to 150 0.84 0.84 mbrt200100(r) 11 mbrt20080(r) t c = 125 c 100 80 www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 1
mbrt20045 thru mbrt200100r www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. mbrt20045 thru mbrt200100r www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 3
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